Abstract:We get size-controlled nanocrystalline silicon (nc-Si) from a-SiNx/a-Si:H/a-SiNx sandwich structures by thermal annealing. Transmission electron microscope analyses show that the mean size and the grain size distribution (GSD) of the nc-Si are controlled by the annealing conditions and the a-Si sublayer thickness. We build a theoretical model of constrained crystallization which can well interpret the phenomena of the growth halt of nc-Si and higher crystallization temperature for the thinner a-Si sublayer. The experimental results indicate that constrained crystallization method is promising to achieve uniform and high density nc-Si array either by thermal annealing or by laser annealing. Based on this investigation we employ the method of laser interference crystallization (LIC) to fabricate nanocrystal Si with the two-dimensional (2D) patterned distribution within 10 nm thick a-Si:H single layer. Si nano-crystallites are selectively located in the discal regions within the initial a-Si:H layer. The present method is promising to fabricate various patterned nc-Si arrays for device applications simply by changing the geometry of the mask.

THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

The Growth Model and Experimental Validation of Size-Controlled Nanocrystalline Silicon

Ultrafast growth of single-crystalline Si nanowires

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Interface Constrained Growth For Size Control Nanofabrication: Mechanism And Experiments

Annealing Effects on the Size of Si-nanocrystals Embedded in Bulk SiO

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Modeling of Silicon-Nanocrystal Formation in Amorphous Silicon/Silicon Dioxide Multilayer Structure

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Fabrication of size-controlled Si NCs in Si-rich Si nitride for floating gate MOS structures

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization

Si-Nanocrystals with Bimodal Size Distribution in Evenly Annealed SiO Revealed with Raman Scattering

Layer-thickness-dependent Formation of Si-nanocrystals Embedded in Amorphous Si/SiO2 Multilayers

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

Structural Nature of Nanocrystalline Silicon