Abstract:Nanoheterostructures of NiSi/Si/NiSi in which the length of the Si region can be controlled down to 2 nm have been produced using in situ point contact reaction between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The Si region was found to be highly strained (more than 12%). The strain increases with the decreasing Si layer thickness and can be controlled by varying the heating temperature. It was observed that the Si nanowire is transformed into a bamboo-type grain of single-crystal NiSi from both ends following the path with low-activation energy. We propose the reaction is assisted by interstitial diffusion of Ni atoms within the Si nanowire and is limited by the rate of dissolution of Ni into Si at the point contact interface. The rate of incorporation of Ni atoms to support the growth of NiSi has been measured to be 7 x 10(-4) s per Ni atom. The nanoscale epitaxial growth rate of single-crystal NiSi has been measured using high-resolution lattice-imaging videos. On the basis of the rate, we can control the consumption of Si and, in turn, the dimensions of the nanoheterostructure down to less than 2 nm, thereby far exceeding the limit of conventional patterning process. The controlled huge strain in the controlled atomic scale Si region, potential gate of Si nanowire-based transistors, is expected to significantly impact the performance of electronic devices.

Interface Constrained Growth For Size Control Nanofabrication: Mechanism And Experiments

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

The Growth Model and Experimental Validation of Size-Controlled Nanocrystalline Silicon

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Modeling of Silicon-Nanocrystal Formation in Amorphous Silicon/Silicon Dioxide Multilayer Structure

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

SiNx thickness dependent morphology and mechanical properties of CrAlN/SiNx nanomultilayers

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Fabrication of size-controlled Si NCs in Si-rich Si nitride for floating gate MOS structures

Atomic-Scale Structural Dynamics at A-Si:H/c-si Heterointerface During Low-Temperature Thermal Annealing

Layer-thickness-dependent Formation of Si-nanocrystals Embedded in Amorphous Si/SiO2 Multilayers

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

In Situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi Through Point Contact Reaction.

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization