Abstract:For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam.

Fabrication of size-controlled Si NCs in Si-rich Si nitride for floating gate MOS structures

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

SiNx thickness dependent morphology and mechanical properties of CrAlN/SiNx nanomultilayers

THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL

Interface Constrained Growth For Size Control Nanofabrication: Mechanism And Experiments

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

Size and density control of Si-nanocrystals realized by SiOx/SiO2 superlattice

Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films

Microstructure Evolution of Si Nanocrystals in Si/C Multilayer Films

Controlled fabrication of Si nanocrystals embedded in thin SiON layers by PPECVD followed by oxidizing annealing

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

Fabrication and Field Emission of Silicon Nano-Crystalline Film

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Annealing Effects on the Size of Si-nanocrystals Embedded in Bulk SiO

Fabrication of 30 nm T gates using SiN[sub x] as a supporting and definition layer

Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO 2 by In-Situ Fabrication Technique

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

The Effect of Multiple Interface States and Nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by Their G — V Characteristics

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization