Abstract:Charge injection and transportation process is a fundamental problem to Si nanocrystals (Si-ncs) based electric and photonic devices. In the manuscript, a single layer of Si-ncs sandwiched by amorphous Si carbide (a-SiC) was prepared by excimer laser annealing of a-SiC/a-Si/a-SiC multilayers, and the charging effect was then characterized by Kelvin probe force microscopy (KPFM) on the microscopic scale. Opposite charges were injected into Si-ncs through the biased tip and formed a core-ring or up-down shaped distribution. The decay characteristics showed that these opposite charges would not only vertically tunnel through the bottom a-SiC layer to substrate but also laterally transport and recombine with each other driven by the attractive Coulomb force. Besides, the charge retention time was also found dependent on the injection biases, which is tentatively ascribed to the charge trapping by the Si-ncs/a-SiC interface states under high bias scanning. The analysis was further supported by conductive atomic force microscopy (CAFM) measurement, in which the current-voltage curves gradually shifted during the repetition test, probably because of bias screening by the trapped charges at these interface states.

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

The Effect of Multiple Interface States and Nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by Their G — V Characteristics

The Charge Storage of the Nc-Si Layer

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Charging/Discharging of Silicon Nanocrystals Embedded in an Sio2 Matrix Inducing Reduction/Recovery in the Total Capacitance and Tunneling Current

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Tunnelling and Storage of Charges in A-Sinx/Nc-Si/A-Sinx Structures