Abstract:We report a direct experiment evidence for holes and electrons charging in a new nanocrystalline Si (nc-Si) floating gate structure (SiO2/nc-Si/SiO2/c-Si) fabricated in-situ by plasma oxidation and layer by layer deposition technique in a plasma enhanced chemical vapor deposition (PECVD) system. In this nc-Si floating gate structures, the thickness of tunneling SiO2 layer is about 2 nm and the mean grain size of nc-Si is 6 nm obtained from Raman scattering and AFM measurements. The discrete quantum level and Coulomb charging energy for a single electron have been observed in large ensemble of nc-Si dots by frequency dependent capacitance spectroscopy, which demonstrates that the Coulomb blockade for electron in nc-Si dots is larger than size fluctuation effects on the quantum confinement for our nc-Si floating gate structure. Quantitatively, the experiment results of capacitance spectroscopy are in good agreement with the theoretical calculations. By contrasted with silicon single electron transistor memory made by using ultra fancy nanotechnology, nc-Si based memory can be fabricated with a minimum perturbation of conventional silicon technology and may be closest to industrial application.

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy