Abstract:We report a direct experiment evidence for holes and electrons charging in a new nanocrystalline Si (nc-Si) floating gate structure (SiO2/nc-Si/SiO2/c-Si) fabricated in-situ by plasma oxidation and layer by layer deposition technique in a plasma enhanced chemical vapor deposition (PECVD) system. In this nc-Si floating gate structures, the thickness of tunneling SiO2 layer is about 2 nm and the mean grain size of nc-Si is 6 nm obtained from Raman scattering and AFM measurements. The discrete quantum level and Coulomb charging energy for a single electron have been observed in large ensemble of nc-Si dots by frequency dependent capacitance spectroscopy, which demonstrates that the Coulomb blockade for electron in nc-Si dots is larger than size fluctuation effects on the quantum confinement for our nc-Si floating gate structure. Quantitatively, the experiment results of capacitance spectroscopy are in good agreement with the theoretical calculations. By contrasted with silicon single electron transistor memory made by using ultra fancy nanotechnology, nc-Si based memory can be fabricated with a minimum perturbation of conventional silicon technology and may be closest to industrial application.

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Coulomb Blockade Effect of Carriers in nc-Si Embedded in Ultrathin SiO2 Films

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.