Abstract:A deep understanding of the interface states in metal-oxide-semiconductor (MOS) structures is the premise of improving the gate stack quality, which sets the foundation for building field-effect transistors (FETs) with high performance and high reliability. Although MOSFETs built on aligned semiconducting carbon nanotube (A-CNT) arrays have been considered ideal energy-efficient successors to commercial silicon (Si) transistors, research on the interface states of A-CNT MOS devices, let alone their optimization, is lacking. Here, we fabricate MOS capacitors based on an A-CNT array with a well-designed layout and accurately measure the capacitance-voltage and conductance-voltage (C-V and G-V) data. Then, the gate electrostatics and the physical origins of interface states are systematically analyzed and revealed. In particular, targeted improvement of gate dielectric growth in the A-CNT MOS device contributes to suppressing the interface state density (D-it) to 6.1 x 10(11) cm(-2) eV(-1), which is a record for CNT- or low-dimensional semiconductors-based MOSFETs, boosting a record transconductance (g(m)) of 2.42 mS/mu m and an on-off ratio of 10(5). Further decreasing D-it below 1 x 10(11) cm(-2) eV(-1) is necessary for A-CNT MOSFETs to achieve the expected high energy efficiency.

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Charging/Discharging of Silicon Nanocrystals Embedded in an Sio2 Matrix Inducing Reduction/Recovery in the Total Capacitance and Tunneling Current

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Silicon Nano-Crystals Based Mos Memory and Effects of Traps on Charge Storage Characteristics

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

Storage Characteristics of Nano-Crystal Si Devices Using Different Measurements for MOS Capacitors

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix