Abstract:A deep understanding of the interface states in metal-oxide-semiconductor (MOS) structures is the premise of improving the gate stack quality, which sets the foundation for building field-effect transistors (FETs) with high performance and high reliability. Although MOSFETs built on aligned semiconducting carbon nanotube (A-CNT) arrays have been considered ideal energy-efficient successors to commercial silicon (Si) transistors, research on the interface states of A-CNT MOS devices, let alone their optimization, is lacking. Here, we fabricate MOS capacitors based on an A-CNT array with a well-designed layout and accurately measure the capacitance-voltage and conductance-voltage (C-V and G-V) data. Then, the gate electrostatics and the physical origins of interface states are systematically analyzed and revealed. In particular, targeted improvement of gate dielectric growth in the A-CNT MOS device contributes to suppressing the interface state density (D-it) to 6.1 x 10(11) cm(-2) eV(-1), which is a record for CNT- or low-dimensional semiconductors-based MOSFETs, boosting a record transconductance (g(m)) of 2.42 mS/mu m and an on-off ratio of 10(5). Further decreasing D-it below 1 x 10(11) cm(-2) eV(-1) is necessary for A-CNT MOSFETs to achieve the expected high energy efficiency.

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

The Effect of Multiple Interface States and Nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by Their G — V Characteristics

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE