Abstract:We report the results of electron tunneling and Coulomb blockade in nanocrystalline silicon (nc-Si) double-barrier floating-gate structure (SiO2/nc-Si/SiO2) fabricated in situ in a plasma-enhanced chemical-vapor-deposition (PECVD) system for the nanoelectronic devices application. The quantum confinement and Coulomb blockade effect have been demonstrated in the capacitance–voltage (C–V) characteristics, in which unique peak structures differ remarkably from the normal smooth C–V curves. The experimental results have been explained by band diagram and equivalent circuits. By contrasted with silicon single electron transistor memory made by using ultra fancy nanotechnology, nc-Si-based memory can be fabricated with a minimum perturbation of conventional silicon technology and may be closest to industrial application.

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE