Abstract:In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the tri-gated junctionless MOSFET, enabling modification of the nanowire's potential well profile. In the presence of light, photogenerated electrons accumulate at the center of the junctionless nanowire, aligning with the modified potential well profile influenced by gate bias. These carriers at the center are far from interfaces and experience less interfacial noise. Therefore, such clean photo-doping shows clear, repeatable peaks in current for specific gate biases compared to the dark condition, considering different operating drain-to-source voltages at room temperature. We propose that photodoping-induced subband occupation of gate tunable potential well of the nanowire is the underlying phenomenon responsible for this kind of observation. This study reveals experimental findings demonstrating gate-induced switching from semi-classical to the quantum domain, followed by the optical occupancy of electronic sub-bands at room temperature. We developed a compact model based on the Nonequilibrium Green's function formalism to understand this phenomenon in our illuminated device better. This work reveals the survival of the quantum confinement effect at room temperature in such semi-classical transport.

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Observation of Ionic Coulomb Blockade in Nanopores.

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

A Silicon Nanocrystal Tunnel Field Effect Transistor

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Coulomb blockade in a Si channel gated by an Al single-electron transistor

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Classical Coulomb Blockade of A Silicon Nanowire Dot

Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots