Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Classical Coulomb Blockade of A Silicon Nanowire Dot

An N-Type Silicon Nanowire Dot Based Single-Electron Transistor

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Observation of Ionic Coulomb Blockade in Nanopores.

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Single-Electron Transport Through Semiconducting Nanowires: A Comparison Between Silicon and Germanium

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Si Nanowire - Array Source Gated Transistors

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

Dual gate controlled single electron effect in silicon nanowire transistors

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Fabricating a Silicon Nanowire by Using the Proximity Effect in Electron Beam Lithography for Investigation of the Coulomb Blockade Effect

A Single-Electron Transistor and an Even-Odd Effect in Chemically Synthesized Ge Nanowires