Abstract:Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits based quantum information processing. Such QDs are suitable for several novel device applications for their unique property of confining carriers 3-dimensionally creating discrete quantum states. However, the realization of such QDs in practice exhibits serious challenge regarding their fabrication in array with desired scalability and repeatability as well as control over the quantum states at room temperature. In this context, the current work reports the fabrication of an array of highly scaled Ge-nanowire (radius ~25 nm) based vertical metal-oxide-semiconductor devices that can operate as voltage tunable quantum dots at room temperature. The electrons in such nanowire experience a geometrical confinement in the radial direction, whereas, they can be confined axially by tuning the applied bias in order to manipulate the quantum states. Such quantum confinement of electrons has been confirmed from the step-like responses in the room temperature capacitance-voltage (C-V) characteristics at relatively low frequency (200 kHz). Each of such steps has observed to encompass convolution of the quantized states occupying ~6 electronic charges. The details of such carrier confinement are analyzed in the current work by theoretically modeling the device transport properties based on non-equilibrium Green's function (NEGF) formalism.

A Single-Electron Transistor and an Even-Odd Effect in Chemically Synthesized Ge Nanowires

Top-gated single-electron transistor in germanium nanowires

Single-Electron Transport Through Semiconducting Nanowires: A Comparison Between Silicon and Germanium

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Top-gated Germanium Nanowire Quantum Dots in a Few-Electron Regime

Al–Ge–Al Nanowire Heterostructure: From Single‐Hole Quantum Dot to Josephson Effect

Theoretical Study of High Performance Germanium Nanowire Quantum Dot

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Voltage tunable quantum dot array by patterned Ge-nanowire based metal-oxide-semiconductor (MOS) devices

Classical Coulomb Blockade of A Silicon Nanowire Dot

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

Anisotropic g -Factor and Spin–Orbit Field in a Germanium Hut Wire Double Quantum Dot

One-dimensional Germanium Nanowires for Future Electronics

Andreev Tunneling Enhanced by Coulomb Oscillations in Superconductor-Semiconductor Hybrid Ge/Si Nanowire Devices

Nanowires: Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling (adv. Mater. 16/2020)

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

An N-Type Silicon Nanowire Dot Based Single-Electron Transistor

Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot