Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Dual gate controlled single electron effect in silicon nanowire transistors

Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires

The Emergence of a Coupled Quantum Dot Array in a Doped Silicon Nanowire Gated by Ultrahigh Density Top Gate Electrodes

Coulomb Oscillations Of Indium-Doped Zno Nanowire Transistors In A Magnetic Field

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Interpretation of Coulomb Oscillations in Carbon-Nanotube-based Field-Effect Transistors

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Classical Coulomb Blockade of A Silicon Nanowire Dot

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

Self-Consistent SchrÖdinger–Poisson Simulations on Capacitance–Voltage Characteristics of Silicon Nanowire Gate-All-Around MOS Devices With Experimental Comparisons

A Single-Electron Transistor and an Even-Odd Effect in Chemically Synthesized Ge Nanowires

Andreev Tunneling Enhanced by Coulomb Oscillations in Superconductor-Semiconductor Hybrid Ge/Si Nanowire Devices

Fabricating a Silicon Nanowire by Using the Proximity Effect in Electron Beam Lithography for Investigation of the Coulomb Blockade Effect

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

Si Nanowire - Array Source Gated Transistors

Gate-tuned Aharonov-Bohm Interference of Surface States in a Quasi-Ballistic Dirac Semimetal Nanowire

In situ axially doped n-channel silicon nanowire field-effect transistors.