Abstract:The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a remote single electron transistor (SET) formed in an adjacent nanowire. By biasing the nanowire and gates of the remote SET with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling the demonstration of independent control over charge transitions in a quadruple (2x2) quantum dot array. This device overcomes the limitations associated with measurements based on tunnelling transport through the dots and permits the sensing of all charge transitions, down to the last electron in each dot. We use effective mass theory to investigate the necessary optimization of the device parameters in order to achieve the tunnel rates required for spin-based quantum computation.

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Classical Coulomb Blockade of A Silicon Nanowire Dot

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Fabrication and Characteristics of Soi-Based Single-Electron Transistor with In-Plane Side Gates

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

Coulomb blockade in a Si channel gated by an Al single-electron transistor

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Calculating the Coulomb blockade phase diagram in the strong coupling regime of single-electron transistor: a quantum Monte Carlo study

Fabrication And Characteristics Of A Si Multiple-Quantum Dots Single Electron Transistor On Simox Substrate

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Single-Electron Transistor Based on Cobalt Oxide.

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

Single-electron pumping in a ZnO single-nanobelt quantum dot transistor