Abstract:For compatibility with CMOS technology, the Single-electron transistor (SET) is preferably made in silicon. In this paper, a Si-based SET with in-plane side gates is proposed, which is fabricated in a Silicon-on-insulator (Sol) substrate using Electron beam lithography (EBL) with high-resolution SAL601 negative or ZEP520 positive e-beam resist and high density Inductively coupled plasma (ICP) dry etching. With the structure and the process carefully controlled, the SET with a 70-nm-radius Coulomb island is successfully fabricated. The R(ds)-T characteristics of the SET indicate that the device has typical semiconductor characteristics and the co-tunneling phenomena are impossible to occur. The I(ds) - V(ds) characteristics of the SET at different values of V(g) at 2K all show Coulomb staircases. And the good reproducibility of the I(ds) - V(ds) characteristics can also be realized. The corresponding dI(ds)/dV(ds) - V(ds) characteristics show the clear conductance oscillations at 2K. The I(ds) - V(g) curve at V(ds) = 0.1V and T = 2K approximately exhibits Coulomb oscillations. The total capacitance of the SET is about 3 aF and its operation temperature reaches about 88K. The fabrication process is quite easy and this kind of Si-based SET has the advantages of simplicity, IC-orientation and compatibility with CMOS process.

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Fabrication and Characteristics of Soi-Based Single-Electron Transistor with In-Plane Side Gates

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Top-gated single-electron transistor in germanium nanowires

Fabrication And Characteristics Of A Si Multiple-Quantum Dots Single Electron Transistor On Simox Substrate

An N-Type Silicon Nanowire Dot Based Single-Electron Transistor

Fabrication of nano-structure and study of Si-based single electron transistor

Dual gate controlled single electron effect in silicon nanowire transistors

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Quantum dots with split enhancement gate tunnel barrier control

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

A Self-Aligned Gate-All-Around Mos Transistor On Single-Grain Silicon

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate