Abstract:The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional trench gate superjunction (CTSJ), conventional trench gate (CT), and conventional planar gate (CT) SiC VDMOS are comprehensively analyzed and simulated. Extensive simulations demonstrate the maximum SET current peaks of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS, which are 188 mA, 218 mA, 242 mA, and 255 mA, with a bias voltage VDS of 300 V and LET = 120 MeV·cm2/mg, respectively. The total charges of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS collected at the drain are 320 pC, 1100 pC, 885 pC, and 567 pC, respectively. A definition and calculation of the charge enhancement factor (CEF) are proposed. The CEF values of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are 43, 160, 117, and 55, respectively. Compared with CTSJ−, CT−, and CP SiC VDMOS, the total charge and CEF of the DTSJ SiC VDMOS are reduced by 70.9%, 62.4%, 43.6% and 73.1%, 63.2%, and 21.8%, respectively. The maximum SET lattice temperature of the DTSJ SiC VDMOS is less than 2823 K under the wide operating conditions of a drain bias voltage VDS ranging from 100 V to 1100 V and a LET value ranging from 1 MeV·cm2/mg to 120 MeV·cm2/mg, while the maximum SET lattice temperatures of the other three SiC VDMOS significantly exceed 3100 K. The SEGR LET thresholds of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are approximately 100 MeV·cm2/mg, 15 MeV·cm2/mg, 15 MeV·cm2/mg, and 60 MeV·cm2/mg, respectively, while the value of VDS = 1100 V.

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

Fabrication and Characteristics of Soi-Based Single-Electron Transistor with In-Plane Side Gates

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Fabrication And Characteristics Of A Si Multiple-Quantum Dots Single Electron Transistor On Simox Substrate

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Single-Electron Transistor Based on Cobalt Oxide.

Fabrication of nano-structure and study of Si-based single electron transistor

Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors

CMOS-compatible fabrication of room-temperature single-electron devices

Titanium Silicide Islands on Atomically Clean Si(100): Identifying Single Electron Tunneling Effects

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Fabrication And Characterization Of Single Electron Transistor On Soi

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

A Vacuum Transistor Based on Electron Emission From SiO<inline-formula> <tex-math notation="LaTeX">$_{\textit{x}}$</tex-math> </inline-formula> Tunneling Diodes