Abstract:In recent years, the requirement for greater scalability of transistor technology for the continuation of Moore's law has led researchers toward the investigations of several innovative advanced semiconductor device as potentially superior alternatives to conventional transistors. Among them, single-electron transistors (SETs) have shown considerable promise in terms of performance and reliability with significant device dimension scaling. However, realistic modeling and simulation are the primary steps toward the practical implementation of SET designs. In this work, a technology computer-aided design simulation-based analytical study of silicon quantum dot SETs is developed to improve the electrical characteristics of the devices through optimization of different device parameters. Further, the investigation is extended to explore the temperature dependency of quantum tunneling by analysis of the characteristic plots of such quantum dot-based nano-devices. Moreover, a machine learning (ML)-based approach has been implemented and validated through development and testing of ML models predicting SET device performance by examining dependence of relevant design parameters on device performance. Hence, the proposed model of SETs provides the analytical understanding for a sustainable and realistic design of SETs allowing approaches to future nano-device-based IC design.

Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits

Monte Carlo Simulation and Macro-Model of Single-Electron Transistor

Advances in the Modeling of Single Electron Transistors for the Design of Integrated Circuit.

Simulation and machine learning based analytical study of single electron transistor (SET)

A Sensitive Charge Scanning Probe Based on Silicon Single Electron Transistor

Macromodeling of realistic single electron transistors for large scale circuit simulation

Characterization and Modeling of SET Generation Effects in CMOS Standard Logic Cells

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

A Compact Model for Multi-Island Single Electron Transistors

Modeling a radio-frequency single-electron-transistor scanning probe

Simulation and Analysis of Single-Electron Transistors with 1-Dimension Multiple Islands

A model for energy quantization of single-electron transistor below 10nm

Modeling and simulation of single-event effect in CMOS circuit

A master equation model of multi-island single-electron transistors based on stability diagram

nSET: Novel simulation method for single-electron tunnel device with 1-Dimension multiple islands

Master-Equation Simulation of Double-Island Single-Electron Transistor Based on Periodical Characteristics

Integration of the Single Electron Transistor with the Atomic Force Scanning Probe

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

A compact analytical model for multi-island single electron transistors

Full adder designed with MOSFET and single-electron transistor hybrid circuit

Accurate Calculation of Quantum Kinetic Energy of Single-Electron Transistor at Room Temperature