Abstract:The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications.

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

On-chip cryogenic multiplexing of Si/SiGe quantum devices

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

On-chip Integration of Si/SiGe-based Quantum Dots and Switched-Capacitor Circuits

Large-scale on-chip integration of gate-voltage addressable hybrid superconductor-semiconductor quantum wells field effect nano-switch arrays

Multimodule microwave assembly for fast readout and charge-noise characterization of silicon quantum dots

Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Scalable on-chip multiplexing of silicon single and double quantum dots

Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots

Method for Efficient Large-Scale Cryogenic Characterization of CMOS Technologies

Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology

3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation

Cryogen-free scanning gate microscope for the characterization of Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices at milli-Kelvin temperatures