Abstract:The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $\mu$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $\mu$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Dispersive Readout of a Few-Electron Double Quantum Dot with Fast RF Gate Sensors.

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot

Gate reflectometry in dense quantum dot arrays

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Gate-controlled charge transfer in Si:P double quantum dots

A high-sensitivity gate-based charge sensor in silicon

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Elongated quantum dot as a distributed charge sensor

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Multimodule microwave assembly for fast readout and charge-noise characterization of silicon quantum dots

Remote capacitive sensing in two-dimension quantum-dot arrays

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Charge Sensing in Intrinsic Silicon Quantum Dots

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

Single-shot single-gate RF spin readout in silicon