Abstract:Fast measurements of quantum devices is useful in areas such as quantum sensing, quantum computing, and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multimodule microwave assembly to demonstrate charge-state readout at the state of the art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing quantum dots (QDs) in a high- κ nanowire transistor. The superconducting chiplet contains resonant and coupling elements as well as LC filters that, when interfaced with the silicon chip, result in a resonant frequency f=2.12 GHz, a loaded quality factor Q=850 , and a resonator impedance Z=470Ω . Combined with the large gate lever arms of SOI technology, we achieve a minimum integration time for single and double QD transitions of 2.77 and 13.5 ns, respectively. We utilize the assembly to measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/f dependence across the whole frequency spectrum as well as a charge-noise level of 4μeV/Hz at 1 Hz. The modular microwave circuitry presented here can be directly utilized in conjunction with other quantum devices to improve the readout performance as well as enable large bandwidth noise spectroscopy, all without the complexity of superconductor-semiconductor monolithic fabrication. https://doi.org/10.1103/PhysRevApplied.21.044016 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to develop a multi - module microwave assembly system to achieve rapid read - out and charge - noise - characteristic analysis of silicon quantum dots (Silicon Quantum Dots, QDs). Specifically, the paper addresses the following key issues: 1. **Rapid charge read - out**: - Rapid charge read - out is very important in fields such as quantum sensing, quantum computing, and nano - device quality analysis. The authors developed a superconductor - semiconductor multi - module microwave assembly system to demonstrate state - of - the - art charge - state read - out. - By integrating the superconductor read - out resonator with the quantum dots on a silicon - on - insulator (SOI) chip, an extremely high read - out speed was achieved. The minimum integration times are 2.77 ns (single - quantum - dot transition) and 13.5 ns (double - quantum - dot transition), approaching the best performance of monolithic integrated resonators. 2. **Charge - noise characterization**: - The paper used this system to measure charge noise in a frequency range of 9 orders of magnitude, up to 500 kHz. The results show that there is a \( \frac{1}{f} \) dependence throughout the frequency range, and the charge - noise level at 1 Hz is \( 4 \mu\text{eV}/\sqrt{\text{Hz}} \). - This highly sensitive charge - noise measurement method can extend the high - frequency end of the spectrum beyond what can be achieved using qubit measurements. 3. **Application of modular microwave circuits**: - The proposed modular microwave circuits can be directly combined with other quantum devices to improve read - out performance and enable large - bandwidth noise spectroscopy without the need for complex superconductor - semiconductor monolithic manufacturing processes. - This method not only simplifies the manufacturing process but also provides flexibility, allowing independent optimization of the layout and manufacturing processes of different technologies. ### Formula summary 1. **Minimum integration time formula**: \[ t_{\text{min}}=\frac{t_{\text{meas}} + t_0}{t_{\text{min}}}^{\zeta} \] where \( t_0 \) is the bandwidth - related time of the measuring device, \( t_{\text{min}} \) is the integration time at SNR = 1, and \( \zeta \) is an exponent determined by the noise type. For white noise, \( \zeta = 1 \), and for pink and red noise, \( \zeta < 1 \). 2. **Charge - noise spectral density formula**: \[ S_{\epsilon\epsilon}=\frac{S_0}{f^{\eta}} \] where \( \sqrt{S_0} \) is the characteristic charge noise at 1 Hz, and \( \eta \) is a power - law exponent, usually approximately 1, with a range between 0.5 and 2. ### Conclusion By developing a multi - module microwave assembly system, this paper significantly improves the charge read - out speed of silicon quantum dots and enables charge - noise characterization in a high - frequency range. These achievements provide important support for the development of quantum computing and other quantum technologies.

Multimodule microwave assembly for fast readout and charge-noise characterization of silicon quantum dots

Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots

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