Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip

Andrea Ruffino,Tsung-Yeh Yang,John Michniewicz,Yatao Peng,Edoardo Charbon,Miguel Fernando Gonzalez-Zalba
DOI: https://doi.org/10.48550/arXiv.2101.08295
2021-01-21
Abstract:Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing experience in the semiconductor industry [6]. However, experimental demonstrations of integration using industrial CMOS at mK temperatures are still in their infancy. Here we present a cryogenic integrated circuit (IC) fabricated using industrial CMOS technology that hosts three key ingredients of a silicon-based quantum processor: QD arrays (arranged here in a non-interacting 3x3 configuration), digital electronics to minimize control lines using row-column addressing and analog LC resonators for multiplexed readout, all operating at 50 mK. With the microwave resonators (6-8 GHz range), we show dispersive readout of the charge state of the QDs and perform combined time- and frequency-domain multiplexing, enabling scalable readout while reducing the overall chip footprint. This modular architecture probes the limits towards the realization of a large-scale silicon quantum computer integrating quantum and classical electronics using industrial CMOS technology.
Quantum Physics,Mesoscale and Nanoscale Physics,Applied Physics
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is how to achieve the integrated read - out of silicon quantum dot (QDs) arrays through industrial - standard CMOS technology in a low - temperature environment (such as 50 mK). Specifically, the paper presents a low - temperature integrated circuit (IC) fabricated using 40 - nm CMOS technology, which integrates three key components: a quantum dot array, digital electronics management, and an analog LC resonator for multiplexed read - out. These components work together to reduce the system size, simplify signal synchronization, decrease latency, and minimize inter - chip wiring, thereby promoting the development of large - scale silicon - based quantum computers. ### Core contributions of the paper: 1. **Integrated architecture**: Proposed a read - out matrix architecture similar to dynamic random - access memory (DRAM), which can reduce the number of control lines through row - column addressing while maintaining the parallelism of read - out, suitable for quantum error correction. 2. **Low - temperature operation**: All components can operate normally at a low temperature of 50 mK, which is the optimal operating temperature range for quantum processors. 3. **Multiplexing technology**: Combined time - and frequency - domain multiplexing technologies to achieve simultaneous read - out of multiple quantum dots, greatly reducing the time and resources required for read - out. 4. **Industrial compatibility**: The CMOS technology used is compatible with existing semiconductor manufacturing processes, which provides the possibility for future large - scale production and application. ### Specific challenges solved: - **System scale and I/O data management**: By integrating quantum and classical electronic devices, the problems of excessive system scale and complex input/output data management are solved. - **Read - out efficiency**: Through multiplexing technology, the read - out efficiency is improved, and the resources and time required for read - out are reduced. - **Low - temperature adaptability**: Ensure that all components can still work effectively at extremely low temperatures, which is crucial for quantum computing. ### Technical details: - **Quantum dot device design**: The quantum dot device is designed as an nMOS transistor with the minimum size to reduce the channel volume and reduce the influence of substrate noise through deep n - well isolation. - **Read - out method**: Use the gated - based microwave reflectometry technique to detect the charge state change of the quantum dot through the oscillating voltage generated by the LC resonator. - **Multiplexing**: Through different combinations of word - line and bit - line voltages, time - domain and frequency - domain multiplexing are achieved, and the states of multiple devices can be read out within the same time step. ### Conclusion: This research demonstrates the possibility of achieving the integrated read - out of silicon quantum dot arrays using industrial - standard CMOS technology in a low - temperature environment. This achievement lays the foundation for the future development of large - scale silicon - based quantum computers and provides new ideas for solving key challenges in quantum computing.