Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

Shun-Li Jiang,Tian-Yi Jiang,Yong-Qiang Xu,Rui Wu,Tian-Yue Hao,Shu-Kun Ye,Ran-Ran Cai,Bao-Chuan Wang,Hai-Ou Li,Gang Cao,Guo-Ping Guo
DOI: https://doi.org/10.1088/1674-1056/ad711d
2024-08-30
Chinese Physics B
Abstract:Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving largescale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double quantum dot (RDQD), which reaches the strong coupling regime with a charge-photon coupling strength of g 0 /2π = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.
physics, multidisciplinary
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