Abstract:The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $\mu$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $\mu$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.

Dispersive Readout of a Few-Electron Double Quantum Dot with Fast RF Gate Sensors.

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Rapid detection of coherent tunneling in an InAs nanowire quantum dot through dispersive gate sensing

Gate reflectometry in dense quantum dot arrays

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

Elongated quantum dot as a distributed charge sensor

A high-sensitivity gate-based charge sensor in silicon

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot

Single-shot latched readout of a quantum dot qubit using barrier gate pulsing

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Sensing dot with high output swing for scalable baseband readout of spin qubits

Single photo-electron trapping, storage, and detection in a one-electron quantum dot

Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor

Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

Single-shot readout of multiple donor electron spins with a gate-based sensor

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays