Abstract:We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into the upper well. Electrons tunneling between this accumulation-mode dot and the lower well are detected using a quantum point contact (QPC), located slightly offset from the dot gate. The charge state of the dot is measured by monitoring the differential transconductance of the QPC near pinch-off. Addition spectra starting with N=0 were observed as a function of gate voltage. DC sensitivity to single electrons was determined to be as high as 8.6%, resulting in a signal-to-noise ratio of ~9:1 with an equivalent noise bandwidth of 12.1 kHz. Analysis of random telegraph signals associated with the zero to one electron transition allowed a measurement of the lifetimes for the filled and empty states of the one-electron dot: 0.38 ms and 0.22 ms, respectively, for a device with a 10 nm AlInAs tunnel barrier between the two wells.

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Charge States and Transition of Double Quantum Dot in the Few-Electron Regime

Gate-Defined Double Quantum Dot With Integrated Charge Sensors Realized In Ingaas/Inp By Incorporating A High-Kappa Dielectric

G-Factor and Exchange Energy in A Few-Electron Lateral Ingaas Quantum Dot

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Correlated Electron Transport Through Parallel Double-Quantum-dot

Magnetic Transport Measurements of Spin–orbit and Hyperfine Interactions in a Ge Hut Wire Double Quantum Dot

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

Electron Transport Study of A Lateral Ingaas Quantum Dot

Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor

Fabrication And Characterization Of An Undoped Gaas/Algaas Quantum Dot Device

Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot

Dispersive Readout of a Few-Electron Double Quantum Dot with Fast RF Gate Sensors.

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.

Single-electron Quantum Dot in Si/SiGe with Integrated Charge-Sensing

Top-gated few-electron double quantum dot in Si/SiGe

Enhanced Readout of Spin States in Double Quantum Dot

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots