Abstract:Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes can be loaded one-by-one into a quantum dot1,2. Depending on the tunnel-coupling strength3,4, this capability facilitates single spin quantum bits1,2,5 or coherent many-body interactions between the confined spin and the Fermi reservoir6,7. Van der Waals (vdW) heterostructures, in which a wide range of unique atomic layers can easily be combined, offer novel prospects to engineer coherent quantum confined spins8,9, tunnel barriers down to the atomic limit10 or a Fermi reservoir beyond the conventional flat density of states11. However, gate-control of vdW nanostructures12-16 at the single particle level is needed to unlock their potential. Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalcogenide quantum dot coupled to a graphene contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier. Thanks to a tunable Fermi reservoir, we can deterministically load either a single electron or a single hole into the quantum dot. We observe hybrid excitons, composed of localized quantum dot states and delocalized continuum states, arising from ultra-strong spin-conserving tunnel coupling through the atomically thin tunnel barrier. Probing the charged excitons in applied magnetic fields, we observe large gyromagnetic ratios (∼8). Our results establish a foundation for engineering next-generation devices to investigate either novel regimes of Kondo physics or isolated quantum bits in a vdW heterostructure platform.

Gate-Defined Quantum-Dot Devices Realized In Ingaas/Inp By Incorporating A Hfo2 Layer As Gate Dielectric

Gate-defined Quantum Devices Realized on an InGaAs/InP Heterostructure by Incorporating a High-Κ Dielectric Material

Gate-Defined Quantum Devices Realized in InGaAs∕InP by Incorporating a High-κ Layer As Gate Dielectric

Gate-Defined Double Quantum Dot With Integrated Charge Sensors Realized In Ingaas/Inp By Incorporating A High-Kappa Dielectric

A Highly Tunable Lateral Quantum Dot Realized in Ingaas/Inp by an Etching Technique

Artificial Haldane Gap Material on A Semiconductor Chip

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Stable quantum dots in an InSb two-dimensional electron gas

Coulomb Blockade and Resonant Tunnelling in Etched and Regrown Ga0.25in0.75as/Inp Quantum Dots

Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir

Electron Transport Study of A Lateral Ingaas Quantum Dot

Theory Of Electronic Properties And Quantum Spin Blockade In A Gated Linear Triple Quantum Dot With One Electron Spin Each

Tunable Zero-Field Kondo Splitting in A Quantum Dot

Electronic g-factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Gate‐Defined Quantum Confinement in CVD 2D WS 2

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

Gate Defined Quantum Dot Realized in a Single Crystalline InSb Nanosheet

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells