Coulomb Blockade and Resonant Tunnelling in Etched and Regrown Ga0.25in0.75as/Inp Quantum Dots

I Shorubalko,P Ramvall,HQ Xu,I Maximov,W Seifert,P Omling,L Samuelson
DOI: https://doi.org/10.1088/0268-1242/16/9/301
IF: 2.048
2001-01-01
Semiconductor Science and Technology
Abstract:We report on fabrication and electron transport properties of etched and epitaxially regrown, heterostructurally defined, Ga0.25In0.75As/InP quantum dots (QDs) connected to a two-dimensional electron gas by short wires. The formation of planar QDs of a size of less than 100 nm is accomplished by controlling the Fermi level both in the dots and in the leads by a top gate. The Coulomb charging effect is found in the transport behaviour of these QDs. We observe also the resonant tunnelling, through the lowest quantized energy level of the QDs.
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