Abstract:We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 ${\mu}$eV to >600 ${\mu}$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

Resonant Tunnelling Via Inas Self-Organized Quantum Dot States

Resonant tunneling through single InAs quantum dot at room temperature

Metastable state involved resonant tunneling through single InAs/GaAs quantum dot

Simulation of Resonant Tunneling Devices: Origin of the I – V Multi-Peak Behavior

Electron Resonant Tunneling Through Inas/Gaas Quantum Dots Embedded in A Schottky Diode with an Alas Insertion Layer

Simulation of Resonant Tunneling Structures: Origin of the I-V Multi-Peak and Plateau-Like Behaviour

The Photocurrent of Resonant Tunneling Diode Controlled by the Charging Effects of Quantum Dots

Room Temperature Observation of Electron Resonant Tunneling Through InAs/AlAs Quantum Dots

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

Enhanced Tunneling in the GaAs P+–n+junction by Embedding InAs Quantum Dots

Electrical Characteristics of InAs Self-Assembled Quantum Dots Embedded in GaAs Using Admittance Spectroscopy

Optical And Electrical Investigation Of Low Dimensional Self-Assembled Inas Quantum Dot Field Effect Transistors

Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot

Quantum Dots for Terahertz Generation

InAs Quantum Dots for Quantum Information Processing

Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Control of charging in resonant tunneling through InAs nanocrystal quantum dots

Shaping InAs Quantum Dot Photoluminescence Using GaAs Nanoresonator Arrays