Abstract:A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anti-crossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point, at which all three QDs are on resonance with the Fermi level of the reservoirs, can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and super-exchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states.

A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

Gate Tunable Parallel Double Quantum Dots in InAs Double-Nanowire Devices

One-dimensional quantum dot array integrated with charge sensors in an InAs nanowire

Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Tunable few electron quantum dots in InAs nanowires

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

Tunable Hybrid Qubit in a GaAs Double Quantum Dot.

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Single to quadruple quantum dots with tunable tunnel couplings

Resonant Tunnelling Via Inas Self-Organized Quantum Dot States

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Top-gate defined double quantum dots in InAs nanowires