Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Anton Faustmann,Patrick Liebisch,Benjamin Bennemann,Pujitha Perla,Mihail Ion Lepsa,Alexander Pawlis,Detlev Grützmacher,Joachim Knoch,Thomas Schäpers

2024-11-29

Abstract:Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to fabricate and characterize InAs nanowire - based quantum dot structures and utilize the buried bottom gates technology to achieve high - performance quantum dot devices**. Specifically, the research aims to overcome the defects and charge - trapping problems caused by surface roughness when fabricating gates using the traditional metal lift - off process, thereby improving the performance of quantum dot devices.

### Detailed Interpretation

1. **Background and Motivation**
- Semiconductor nanowires can be used to create quantum dot qubits, and the formation of quantum dots is usually achieved through bottom gates.
- The traditional method for fabricating bottom gates uses the lift - off process, but this method can lead to an uneven surface, which in turn causes defects and charge traps and affects gate performance.
- The paper proposes an alternative method, that is, etching trenches in the Si substrate and filling them with sputtered TiN superconducting material, followed by mechanical polishing to obtain a flat buried bottom gate structure.

2. **Research Objectives**
- **Improve Gate Performance**: By fabricating a completely flat buried bottom gate structure, reducing surface roughness, and avoiding defects and charge traps, the electrical performance of the gate is improved.
- **Achieve Small - Spaced Gates**: Using electron - beam lithography technology, a small gate spacing of 60 nm is achieved, which helps to more precisely control the formation of quantum dots.
- **Verify Quantum Dot Characteristics**: Verify through experiments whether InAs nanowire - based quantum dot devices can exhibit single - electron tunneling and Coulomb blockade effects.

3. **Experimental Results**
- A buried bottom gate structure with low leakage current (the leakage current is less than 1 nA at ±10 V at low temperature) and a 60 - nm gate spacing has been successfully fabricated.
- InAs nanowire quantum dot devices based on these gate structures show obvious single - electron tunneling and Coulomb blockade phenomena.
- A small amount of gate hysteresis is observed, indicating that the charge traps in the gate dielectric have a minor impact on the device.

4. **Future Prospects**
- The researchers plan to further optimize the polishing process to improve the quality of the gate structure and explore the realization of coupling between quantum dots through tunnel - coupling superconducting electrodes.
- This buried bottom gate platform is expected to be applied to the regulation of other two - dimensional materials (such as graphene or transition metal dichalcogenides), further expanding its application range.

In conclusion, this paper has successfully solved the surface roughness problem brought by the traditional lift - off process by developing a new buried bottom gate fabrication technology, providing new ideas for the preparation of high - performance quantum dot devices.