Abstract:Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon-based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate-defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group-IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy-hole-light-hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state-of-the-art in semiconductor quantum computing and suggests avenues for future research. Silicon-based spin quantum bits (qubits) have emerged as a promising platform for large-scale quantum computing due to their compatibility with the semiconductor fabrication technology. This review covers the latest developments of spin qubits in various gate-defined semiconducting nanostructures made of silicon and germanium, and highlights strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points.image

Gate Defined Quantum Dot Realized in a Single Crystalline InSb Nanosheet

A Double Quantum Dot Defined by Top Gates in a Single Crystalline InSb Nanosheet

Quantum transport in an ambipolar InSb nanowire quantum dot device

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

Stable quantum dots in an InSb two-dimensional electron gas

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Electronic g-factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot

Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets.

Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

A Gate Defined Quantum Dot on the Two-Dimensional Transition Metal Dichalcogenide Semiconductor WSe2

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Top-gate defined double quantum dots in InAs nanowires

Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets.