Abstract:The configurations of core/shell nanowires (NWs) and quantum dots (QDs) decorating NWs have found great applications in forming optoelectronic devices thanks to their superior performances. The combination of the two configurations would expect to bring more benefits, however, the nanometer-scale electrostatic properties of the QD/buffer layer/NW heterostructures are still unrevealed. In this study, the InAs QDs decorating GaAs/AlAs core/shell NWs are systemically studied both experimentally and theoretically. The layered atomic structures, chemical information, and anisotropic strain conditions are characterized by comprehensive transmission electron microscopy (TEM) techniques. Quantitative electron holography analyses show a large number of electrons accumulating in the InAs QD, especially at the dot apex, and charges of reversed signs and similar densities are observed to distribute at the sequential interfaces, leaving great amounts of holes in the NW core. Theoretical calculations including simulated heterostructural band structures, interfacial charge transfer, and chemical bonding analysis are in good accordance with the experimental results, and prove the important role of the AlAs buffer layer in adjusting the heterostructural band structure as well as forming stable InAs QDs on the NW surfaces. These results could be significant for achieving related optoelectronic devices with better stability and higher efficiency.

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

A Double Quantum Dot Defined by Top Gates in a Single Crystalline InSb Nanosheet

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Double Quantum Dots in Atomically-Precise Graphene Nanoribbons

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Gate Tunable Parallel Double Quantum Dots in InAs Double-Nanowire Devices

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire

Top-gate defined double quantum dots in InAs nanowires

Triggering InAs/GaAs Quantum Dot nucleation and growth rate determination by in-situ modulation of surface energy

A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

One-dimensional quantum dot array integrated with charge sensors in an InAs nanowire

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.

Fabrication And Characterization Of An Undoped Gaas/Algaas Quantum Dot Device

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

A Gate Defined Quantum Dot on the Two-Dimensional Transition Metal Dichalcogenide Semiconductor WSe2

Tunable few electron quantum dots in InAs nanowires

Study of Nanometer-Scale Structures and Electrostatic Properties of InAs Quantum Dots Decorating GaAs/AlAs Core/shell Nanowires