Tunable few electron quantum dots in InAs nanowires

I. Shorubalko,A. Pfund,R. Leturcq,M. T. Borgström,F. Gramm,E. Müller,E. Gini,K. Ensslin
DOI: https://doi.org/10.1088/0957-4484/18/4/044014
2006-09-19
Abstract:Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The main problems that this paper attempts to solve are: how to realize tunable few - electron quantum dots (QDs) in InAs nanowires, study the influence of spin - orbit interaction on spin coherence in these quantum dots, and the possibility of manipulating a single spin using an electric field. Specifically, the key points of the paper include: 1. **Realizing high - quality few - electron quantum dots**: - Use top - gates to locally deplete InAs nanowires and form tunneling barriers to observe the Coulomb blockade effect. - By adjusting three gate voltages, a single quantum dot or two quantum dots in series can be formed. 2. **Studying spin - orbit interaction**: - The InAs material has a strong spin - orbit interaction, which provides an opportunity to study different decoherence mechanisms. - The strong spin - orbit interaction makes it possible to manipulate a single spin by an electric field instead of a magnetic field. 3. **Overcoming technical problems**: - The small band gap of the InAs material makes it difficult to form reliable Schottky barriers, so the traditional back - gate method is not suitable for InAs. - The paper proposes a new method, using "half wrap - around - gates" to cover most of the surface of the nanowire, thereby effectively locally depleting the nanowire. Through these methods, the researchers have demonstrated the ability to fabricate high - quality, tunable few - electron quantum dots in InAs nanowires, laying the foundation for further research on single - electron transport and coupled systems.