Abstract:The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single- and dual-gate devices, while a top metal gate is employed as a second gate in the dual-gate devices. This top gate is made either as a global gate or as a local finger gate by using a thin HfO2 layer grown by atomic layer deposition as a gate dielectric. The measurements reveal that the fabricated devices show the desired transistor characteristics. The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires. For InSb nanowire quantum dots, both contact-induced Schottky-barrier-defined devices and top-finger-gate-defined devices are fabricated, and the Si substrate is used as a gate to tune the electron number in the quantum dots. The electrical measurements of these fabricated quantum-dot devices show the Coulomb-blockade effect at 4.2 K. A Fabry-Perot-like interference effect is also observed in a Schottky-barrier-defined quantum device. The authors also discuss in a comparative way, the results of measurements for the InSb nanowire devices made by different fabrication technologies employed in this study.

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

Quantum transport in an ambipolar InSb nanowire quantum dot device

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

Gate Defined Quantum Dot Realized in a Single Crystalline InSb Nanosheet

A Double Quantum Dot Defined by Top Gates in a Single Crystalline InSb Nanosheet

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Stable quantum dots in an InSb two-dimensional electron gas

Molecular Beam Epitaxial Growth and Electronic Transport of GaInSb/GaSb (111) Quantum Wells

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Gate Tunable Parallel Double Quantum Dots in InAs Double-Nanowire Devices

Tunable few electron quantum dots in InAs nanowires

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Straight Indium Antimonide Nanowires with Twinning Superlattices Via a Solution Route.

Epitaxial Indium on PbTe Nanowires for Quantum Devices

Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Top-gate defined double quantum dots in InAs nanowires

Ballistic Transport and Quantum Interference in InSb Nanowire Devices

Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.