Abstract:We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing.

Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Colloidal GaAs quantum wires: solution-liquid-solid synthesis and quantum-confinement studies.

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

Molecular Beam Epitaxial Growth and Electronic Transport of GaInSb/GaSb (111) Quantum Wells

Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi two-dimensional electron system

Observation of large many-body Coulomb interaction effects in a doped quantum wire

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Electronic Band Structures and Electron Spins of InAs/GaAs Quantum Dots Induced by Wetting-Layer Fluctuation

Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Electronic Structure of Nanometer-Scale Semiconductor Wires