Abstract:The sharpness of the interface between two semiconductors InAs and GaSb is crucial for the observation of a quantized Hall effect. Intermixing between the two materials at such an interface leads to a trapped two‐dimensional hole gas which suppresses Hall quantization and contributes an additional electrical conduction channel. The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator.

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Infrared-Absorption Due To 2-Dimensional-Electron-Gas Collective Excitation In Gaas/Alxga1-Xas Multiple-Quantum-Well Structures

Probing the Semiconductor to Semimetal Transition in InAs/GaSb Double Quantum Wells by Magneto-Infrared Spectroscopy

Quantum Hall-Effect Of Two-Dimensional Electron-Gas In Alyga1-Yas Ga1-Xinxas Gaas Pseudomorphic Structures

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure

Observation of excited states in a p-type GaAs quantum dot

Occupation of the Double Subbands by the Two-Dimensional Electron Gas in the Triangular Quantum Well at Al X Ga 1 − X N / G a N Heterostructures

Observation of El2 and Additional Deep Levels at Low Temperature in an Algaas/Gaas Multiple-Quantum-Well Structure

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

Intersubband optical absorption of electrons in double parabolic quantum wells of Al x Ga 1− x As/Al y Ga 1− y As

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Metastable Excited States of a Closed Quantum Dot Probed by an Aluminum Single-Electron Transistor

Piezomodulated-reflectivity study of GaAs/Al0.29Ga0.71As single quantum well

AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells