Abstract:We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta doping. For AlGaN/GaN, we obtained good theoretical agreement with experimental measurements of transition energy, integrated absorbance and linewidth by considering many-body effects, interface roughness, and calculations of the transition lifetime that include dephasing. For the AlInN/GaN system, experimental measurements of the integrated absorbance due to the superlattice transitions produced values more than one order of magnitude lower than AlGaN/GaN heterostructures at similar doping levels. Furthermore, observed transition energies were roughly 150 meV higher than expected. The weak absorption and high transition energies measured in these structures is attributed to columnar alloy inhomogeneity in the AlInN barriers observed in high-angle annular dark-field scanning transmission electron microscopy. We simulated the effect of these inhomogeneities using three-dimensional band-structure calculations. The inhomogeneities were modeled as AlInN nanorods with radially varying In composition embedded in the barrier material of the superlattice. We show that inclusion of the nanorods leads to the depletion of the quantum wells (QWs) due to localization of charge carriers in high-In-containing regions. The higher energy of the intersubband transitions was attributed to the relatively uniform regions of the QWs surrounded by high Al (95%) composition barriers. The calculated transition energy assuming Al0.95In0.05N barriers was in good agreement with experimental results.

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

Intersubband Transitions in GaN/Al x Ga 1-x N Multi Quantum Wells

Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates

Near-Infrared Wavelength Intersubband Transitions In Gan/Aln Short Period Superlattices

Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Infrared Intersubband Absorption in Nonpolar A-Plane AlGaN/GaN Multiple Quantum Wells

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

Intersubband Absorption Properties of High Al Content Al X Ga 1− X N/GaN Multiple Quantum Wells Grown with Different Interlayers by Metal Organic Chemical Vapor Deposition

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Intrasubband and Intersubband Transitions in GaAs∕AlxGa1−xAs Multiple Quantum Wells

Infrared absorption and current–voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy

Infrared-Absorption Due To 2-Dimensional-Electron-Gas Collective Excitation In Gaas/Alxga1-Xas Multiple-Quantum-Well Structures

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Optical Transitions In Ganas/Gaas Single Quantum Well

Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

Infrared Absorption in SiGe/Si Multiple Quantum Wells

Intersubband Transition in AlGaN/GaN Step Quantum Wells at 3–5 Μm