Abstract:Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 μm wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-section. Furthermore, the three-dimensional carrier confinement in nanowire heterostructures opens new possibilities to tune the carrier relaxation time. However, the generation of structural defects and the surface sensitivity of GaAs nanowires have so far hindered the fabrication of nanowire intersubband devices. Here, we report the first demonstration of intersubband photodetection in a nanowire, using GaN nanowires containing a GaN/AlN superlattice absorbing at 1.55 μm. The combination of spectral photocurrent measurements with 8-band k·p calculations of the electronic structure supports the interpretation of the result as intersubband photodetection in these extremely short-period superlattices. We observe a linear dependence of the photocurrent with the incident illumination power, which confirms the insensitivity of the intersubband process to surface states and highlights how architectures featuring large surface-to-volume ratios are suitable as intersubband photodetectors. Our analysis of the photocurrent characteristics points out routes for an improvement of the device performance. This first nanowire based intersubband photodetector represents a technological breakthrough that paves the way to a powerful device platform with potential for ultrafast, ultrasensitive photodetectors and highly efficient quantum cascade emitters with improved thermal stability.

Intersubband Transition in AlGaN/GaN Step Quantum Wells at 3–5 Μm

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells

Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Multi-bands Photoconductive Response in AlGaN/GaN Multiple Quantum Wells

Intersubband optical absorptions of a GaN-based step quantum well with built-in electric field

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

Effect of Polarization on Intersubband Transition in AlGaN/GaN Multiple Quantum Wells

Near-Infrared Two-Color Intersubband Transitions in Aln/Gan Coupled Double Quantum Wells

Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices

Optical Transitions In Ganas/Gaas Single Quantum Well

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Intersubband Transitions at Atmospheric Window in Alxga1-Xn/Gan Multiple Quantum Wells Grown on Gan/Sapphire Templates Adopting Aln/Gan Superlattices Interlayer

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities