Abstract:We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta doping. For AlGaN/GaN, we obtained good theoretical agreement with experimental measurements of transition energy, integrated absorbance and linewidth by considering many-body effects, interface roughness, and calculations of the transition lifetime that include dephasing. For the AlInN/GaN system, experimental measurements of the integrated absorbance due to the superlattice transitions produced values more than one order of magnitude lower than AlGaN/GaN heterostructures at similar doping levels. Furthermore, observed transition energies were roughly 150 meV higher than expected. The weak absorption and high transition energies measured in these structures is attributed to columnar alloy inhomogeneity in the AlInN barriers observed in high-angle annular dark-field scanning transmission electron microscopy. We simulated the effect of these inhomogeneities using three-dimensional band-structure calculations. The inhomogeneities were modeled as AlInN nanorods with radially varying In composition embedded in the barrier material of the superlattice. We show that inclusion of the nanorods leads to the depletion of the quantum wells (QWs) due to localization of charge carriers in high-In-containing regions. The higher energy of the intersubband transitions was attributed to the relatively uniform regions of the QWs surrounded by high Al (95%) composition barriers. The calculated transition energy assuming Al0.95In0.05N barriers was in good agreement with experimental results.

Near-Infrared Two-Color Intersubband Transitions in Aln/Gan Coupled Double Quantum Wells

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Suppression of Intersubband Transition by Applied Electrical Fields in AlN/GaN Coupled Double Quantum Wells

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Near-Infrared Wavelength Intersubband Transitions In Gan/Aln Short Period Superlattices

Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Influence Of Width Of Left Well On Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

Optimization of A Solar-Blind and Middle Infrared Two-Colour Photodetector Using Gan-Based Bulk Material and Quantum Wells

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

Intersubband Transition in AlGaN/GaN Step Quantum Wells at 3–5 Μm

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells

Multi-bands Photoconductive Response in AlGaN/GaN Multiple Quantum Wells