Abstract:By solving the Schrdinger and Poisson equations self-consistently, the central barrier height, central barrier width, well width, and doping concentration in the barriers of symmetric Al_ 0.75 Ga_ 0.25 N/GaN double quantum wells (DQWs) have been studied to investigate their influences on the wavelength and absorption coefficient of intersubband transitions (ISBTs). A smaller wavelength of the ISBT between the first odd and the second even order subbands (S_ 1odd -S_ 2even ISBT) in Al_ 0.75 Ga_ 0.25 N/GaN DQWs and a larger absorption coefficient of the S_ 1odd -S_ 2even ISBT were obtained with decreased central barrier height, when the central barrier height was larger than 0.62 eV. The wavelength of the S_ 1odd -S_ 2even ISBT decreases, and the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases, when the width of the central barrier is reduced. On the other hand, decreasing the width of the well will result in smaller wavelength of the S_ 1odd -S_ 2even ISBT and larger absorption coefficient of the S_ 1odd -S_ 2even ISBT when the width of the well is narrower than 1.9 nm. When doping concentration in the barriers is smaller than 10~ 18 /cm~3, the wavelength of the S_ 1odd -S_ 2even ISBT is unchanged, while the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases with the doping concentration. These results provide useful guidance for realization of ultrafast two-color optoelectronic devices operating in the optical communication wavelength range.

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Suppression of Intersubband Transition by Applied Electrical Fields in AlN/GaN Coupled Double Quantum Wells

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Intersubband Transition in Symmetric AlxGa1 − Xn/gan Double Quantum Wells with Applied Electric Field

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Influence of polarization-induced electric fields on optical properties of intersubband transitions in AlxGa1-xN/GaN double quantum wells

Influence of Polarization-Induced Electric Fields on Coherent Electron Tunneling in AlN/GaN Coupled Double Quantum Wells

Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Influence Of Polarization-Induced Electric Field On Subband Structure In A1(Chi)Ga(1-Chi)N/Gan Double Quantum Wells

Influence of Polarization-Induced Electric Field on Subband Structure and Electron Distribution in Al/sub X/ga/sub 1-X/n/gan Double Quantum Wells

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Electric field effect on anisotropic nonlinear optical properties of GaN/AlN quantum dots with multitype-tunable shape

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Influence of Polarization2Induced Electric Fields on Optical Properties of Intersubband Transitions in Al

The Electronic States And The Optical Absorption For An Asymmetrical Quantum Well Applied With An External Electric Field

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

Built-in Electric Field Effect on the Linear and Nonlinear Intersubband Optical Absorptions in InGaN Strained Single Quantum Wells

Second-Order Nonlinear Optical Susceptibilities Induced by Built-In Electric Field in Wurtzite Nitride Double Quantum Wells

Interband Transition Physics from the Absorption Edge in GaN: New Prospects from Numerical Analysis