Abstract:Within the framework of the dielectric-continuum model, the equations of motion for p-polarization field in wurtzite quantum well are solved for the propagating optical phonon modes. The polarization eigenvector and the dispersion relation are derived by using the determinate method. The dispersion relation and phonon modes properties of the propagating optical phonons are investigated for GaN/AlN single QW. The numerical results show that the propagating phonons have a quantization character by a quantum number n that define its order. The propagating optical phonons are more dispersive for decreasing n, and the bands formed by the dispersion curves are narrower for higher order modes. The wave vector and width of quantum well have more important effect on phonon energy, with the increase of wave vector or width of quantum well, the energy of propagating optical phonon modes decrease in TO domain (between A(1) (TO) and E(1) (TO) frequency of GaN), and increase in LO domain (between GaN A(1) (LO) and E(1) (LO) frequency of GaN). The strain effects of QW structures have clear influence on the dispersion behavior of propagating optical phonons. The frequency of the propagating optical phonon modes is increased due to the strains of the QW structure.

Influence of Polarization-Induced Electric Fields on Coherent Electron Tunneling in AlN/GaN Coupled Double Quantum Wells

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Influence of Polarization-Induced Electric Field on Subband Structure and Electron Distribution in Al/sub X/ga/sub 1-X/n/gan Double Quantum Wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Influence Of Polarization-Induced Electric Field On Subband Structure In A1(Chi)Ga(1-Chi)N/Gan Double Quantum Wells

Influence of polarization-induced electric fields on optical properties of intersubband transitions in AlxGa1-xN/GaN double quantum wells

Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Suppression of Intersubband Transition by Applied Electrical Fields in AlN/GaN Coupled Double Quantum Wells

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Depth profiled polarization effects in AlGaN quantum wells probed with interconnected cathodoluminescence spectroscopy and ion sputtering

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Effects of built-in electric field on polarons in wurtzite GaN/AlN quantum wells

Influence of Polarization2Induced Electric Fields on Optical Properties of Intersubband Transitions in Al

Modulating Optical Polarization Properties of Al-Rich Algan/Aln Quantum Well by Controlling Wavefunction Overlap

The Optical Kerr Effect in Wurtzite Gan-Based Double Quantum Wells: Influences of Piezoelectricity and Spontaneous Polarization

Effect of Polarization on Intersubband Transition in AlGaN/GaN Multiple Quantum Wells

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Polaron effects due to interface optical-phonons in wurtzite GaN/AlN quantum wells

Electric field effect on anisotropic nonlinear optical properties of GaN/AlN quantum dots with multitype-tunable shape