Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

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Linear and Nonlinear Intersubband Refractive Index Changes in Wurtzite Algan/Gan Double Quantum Wells: Effects of Piezoelectricity and Spontaneous Polarization

NONLINEAR OPTICAL RECTIFICATION OF A COUPLING WURTZITE GaN-BASED QUANTUM WELL WITH BUILT-IN ELECTRIC FIELDS

Effects of Piezoelectricity and Spontaneous Polarization on Electronic and Optical Properties of Wurtzite III–V Nitride Quantum Wells

Second-Order Nonlinear Optical Susceptibilities Induced by Built-In Electric Field in Wurtzite Nitride Double Quantum Wells

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Nonlinear Refractive Index Change And Optical Rectification In A Gan-Based Step Quantum Wells With Strong Built-In Electric Field

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Quantum Confined Stark Effect on Intersubband Transitions in Strained Wurtzite Nitride Quantum Wells

Influence Of Polarization-Induced Electric Field On Subband Structure In A1(Chi)Ga(1-Chi)N/Gan Double Quantum Wells

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Polaron Effect on Linear and Nonlinear Intersubband Optical Absorption of a Wurtzite GaN-based Nanowire

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Influence of Polarization-Induced Electric Fields on Coherent Electron Tunneling in AlN/GaN Coupled Double Quantum Wells

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells： Strong Built-in Electric Field Effects

Influence of polarization-induced electric fields on optical properties of intersubband transitions in AlxGa1-xN/GaN double quantum wells

Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Built-in Electric Field Effect on the Linear and Nonlinear Intersubband Optical Absorptions in InGaN Strained Single Quantum Wells