Abstract:Based on the density matrix method and the iterative treatment, the second-harmonic generation (SHG) susceptibility of a wurtzite nitride coupling quantum well (CQW) with strong built-in electric fields have been theoretically investigated. The effect of the band non-parabolicity effect has been taken into account. A typical wurtzite GaN/InxGa1–xN CQW are chosen to perform numerical calculations. The localized properties of the electronic ground state and the low-excited states in the system are analyzed in detail. The calculated SHG coefficients reach the order of magnitude of 10−7m/V, which is two-order larger than the corresponding values in wurtzite single quantum wells. Moreover, it is confirmed that the SHG coefficients are not monotonic functions of the well width, barrier width and the doped concentration of the CQW systems, but have complicated dependent relations on them. The reasons resulting in these characteristics can be attributed to the intense competition between the strong built-in electric field effect and the quantum size effect for the electronic confined situation in the wurtzite CQWs. The calculated results also show that a strong SHG effect can be realized in the nitride CQW by choosing a group of optimized structural parameters and doped fraction.

NONLINEAR OPTICAL RECTIFICATION OF A COUPLING WURTZITE GaN-BASED QUANTUM WELL WITH BUILT-IN ELECTRIC FIELDS

Enhancement of optical rectification in coupled quantum wells

Nonlinear Refractive Index Change And Optical Rectification In A Gan-Based Step Quantum Wells With Strong Built-In Electric Field

Second-Order Nonlinear Optical Susceptibilities Induced by Built-In Electric Field in Wurtzite Nitride Double Quantum Wells

The Optical Kerr Effect in Wurtzite Gan-Based Double Quantum Wells: Influences of Piezoelectricity and Spontaneous Polarization

Linear and Nonlinear Intersubband Refractive Index Changes in Wurtzite Algan/Gan Double Quantum Wells: Effects of Piezoelectricity and Spontaneous Polarization

THIRD-HARMONIC GENERATION OF WURTZITEGaN-BASED COUPLING QUANTUM WELLS WITH STRONG BUILT-IN ELECTRIC FIELDS

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

Nonlinear optical rectification in symmetric double-graded quantum wells dressed by non-resonant laser field under electric and magnetic fields

Optical Confinement Via Quantum Well Intermixing On A Buried Ingaas/Ingaasp Heterostructure

Linear Electro-Optic Effect Due to the Built-in Electric Field in InGaN/GaN Quantum Wells

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Intersubband optical absorptions of a GaN-based step quantum well with built-in electric field

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Polaron Effect on Linear and Nonlinear Intersubband Optical Absorption of a Wurtzite GaN-based Nanowire

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing