Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing (rapid thermal annealing), these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 100 nm at 1.55 mu m in InGaAs/lnGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, postgrowth processing step. The performance of both passive (waveguide) and active (laser and amplifier) devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.

Optical Confinement Via Quantum Well Intermixing On A Buried Ingaas/Ingaasp Heterostructure

Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Quantum Well Intermixing Enhancement Using Ge-Doped Sol-Gel Derived Sio2 Encapsulant Layer In Ingaas/Inp Laser Structure

Narrow Stripe Selective Growth of Ingaalas Waveguides Used for Buried Heterostructure Lasers

Lateral Selectivity of Ion-Induced Quantum Well Intermixing

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Transparent Waveguides for WDM Transmitter Arrays Using Quantum Well Shape Modification

Argon Plasma Induced Quantum Well Intermixing Technology

Transparency of Band-Gap-shifted InGaAsP/lnP Quantum-Well Waveguides

Narrow Stripe Selective Growth of Oxide-Free InGaAlAs MQWs Used for Buried Heterostructure Lasers

Fabrication and Optical Properties of Gaas/Ingaas/Gaas Nanowire Core-Multishell Quantum Well Heterostructures

NONLINEAR OPTICAL RECTIFICATION OF A COUPLING WURTZITE GaN-BASED QUANTUM WELL WITH BUILT-IN ELECTRIC FIELDS

Quantum well-based waveguide for semiconductor lasers