Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation
s charbonneau,p j poole,p g piva,g c aers,emil s koteles,mahmoud fallahi,j j he,j p mccaffrey,m buchanan,michel dion,r d goldberg,i v mitchell
DOI: https://doi.org/10.1063/1.359948
IF: 2.877
1995-01-01
Journal of Applied Physics
Abstract:The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. (C) 1995 American Institute of Physics.