Abstract:The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the quantum well active region. Because of the internal polarization fields in nitride heterostructures, there exist four permutations of doping and polarization for the realization of such light emitters. Which permutation is the most desirable for efficient light emission? In this work, we answer this question by demonstrating a fundamentally new approach towards efficient light emission with bottom-tunnel junctions. The bottom-tunnel junction design aligns the polarization fields in a desired direction in the quantum well, while simultaneously eliminating the need for p-type contacts, and allowing efficient current spreading. By preventing electron overshoot past quantum wells, it disables carrier recombination in undesired regions of the quantized heterostructures, and opens up the possibility for new geometries of integrating and stacking multiple light emitters. Due to the inherent advantages, the bottom-tunnel junction light emitting diode enables a 200-300% increase in the light emission efficiency over alternate heterostructure designs.

Polarization-insensitive Quantum Well Optoelectronic Devices Using Quantum Well Shape Modification

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

Transparent Waveguides for WDM Transmitter Arrays Using Quantum Well Shape Modification

Ultra-broadband Depolarization Based on Directly-Coupled Quantum Wire-to-well Modulation and Their Aliasing Effect for Polarization-Insensitive Light-Emitting Diodes.

Polarization Independent Δ-Strained InGaAs/InGaAsP Quantum Well Waveguide Modulator

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing

Polarization Insensitive Gain Medium with Hybrid Strained Quantum Well

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions

Design and Fabricate InGaAlAs Quantum Well Device for Future Optoelectronic Integration

Movpe Growth of 1310 Nm Polarization-Insensitive Strained Quantum-Well Semiconductor Optical Amplifiers

Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring