Abstract:Although traditional quantum-confined nanostructures e.g. regular quantum wells or quantum dots have achieved huge success in the field of semiconductor lasers for past decades, these traditional nanostructures are encountering the difficulty of enhancing device performance to a higher level due to their inherent gain bottleneck. In this paper, we are proposing a new super-gain nanostructure based on self-assembled well-wire complex energy-band engineering with InGaAs-based materials to break through the existing bottleneck. The nanostructure is constructed by utilizing the special strain-driven indium (In)-segregation and the growth orientation-dependent on-GaAs multi-atomic step effects to achieve the distinguished ultra-wide and uniform super-gain spectra. The structural details and its luminescence mechanism are investigated by multiple measurement means and theoretical modeling. The polarized gain spectra with the max fluctuation of <3 cm −1 in 904 nm–998 nm for transverse electric (TE) mode and 904 nm–977 nm for transverse magnetic (TM) mode are simultaneously obtained with this nanostructure. It enables an ultra-low output power fluctuation of <0.7 dB and a nearly-constant threshold power throughout an ultra-wide wavelength range under a fixed injection level. It was difficult to realize these in the past. Therefore, the described super-gain nanostructure brings a brand-new chance of developing high performance of tunable laser diodes.

Ultra-broadband Depolarization Based on Directly-Coupled Quantum Wire-to-well Modulation and Their Aliasing Effect for Polarization-Insensitive Light-Emitting Diodes.

Polarization-insensitive Quantum Well Optoelectronic Devices Using Quantum Well Shape Modification

Broadband Polarization-Independent Directional Coupler Using Asymmetric-Waveguides

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Polarization Insensitive Gain Medium with Hybrid Strained Quantum Well

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Simulation of Polarization-Insensitive Multiple-Quantum-well Superluminescent Diodes

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic-integrated circuits and components using quantum well intermixing

Super-gain nanostructure with self-assembled well-wire complex energy-band engineering for high performance of tunable laser diodes

Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs

Polarization Modification In Ingan/Gan Multiple Quantum Wells By Symmetrical Thin Low Temperature-Gan Layers

Absorption loss properties and Stokes shifts of InGaAs-based self-assembled well-wire-hybrid quantum structures

Ultrabroadband and Independent Polarization of Optical Amplification with InGaAs-based Indium-Rich Cluster Quantum-Confined Structure

Linearly Polarized Broadband Emission and Multiwavelength Lasing in Solution-Processed Quantum Dots

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

Broadband High Contrast Ratio Optical Diodes Based on Polarization Conversion

Manipulation of Polarization Characteristics in Wurtzite ΙΙΙ-nitride Nanowires for Linearly Polarized Emission

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells