Abstract:Nowadays, strained quantum structures have been widely used in various light-emitting devices with a variety of compounds for progressive applications. However, the lattice-mismatch-induced strains in the materials would cause a problem of polarization dependence for polarization-independent optical applications. To address this issue, in this paper we propose a novel ultra-broadband depolarization mechanism and approach based on a directly-coupled well-wire-hybrid nanostructure. It contains quantum wire-to-well modulation and their aliasing effects on strain, energy-band structure and optical gain to obtain independent and comparable bipolarization of optical signals. The material structure involves a special well and on-well quantum wires with gradually-changing band-gaps, which are formed by utilizing the indium (In)-segregation effect and the growth-orientation-dependent multi-atomic step effect. With this special hybrid nanostructure, the depolarization efficiency can be 95% higher than that of a single compressive-strained quantum well. A low polarization degree of 0.05 and a very small gain difference of |GTE - GTM| < 1.3 cm-1 in different polarizations are achieved over a very broad gain bandwidth (870-950 nm) for an InGaAs material system. Therefore, this is a new chance for the development of ultra-broadband and polarization-insensitive optical applications.

Polarization Insensitive Gain Medium with Hybrid Strained Quantum Well

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Polarization-insensitive Quantum Well Optoelectronic Devices Using Quantum Well Shape Modification

Ultra-broadband Depolarization Based on Directly-Coupled Quantum Wire-to-well Modulation and Their Aliasing Effect for Polarization-Insensitive Light-Emitting Diodes.

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

A Dressed-State Assisted Left-Handed Coherent Medium for High-Gain Optical Amplification

High-Gain Polarization-Insensitive Semiconductor Optical Amplifier with Tensile-Strained InGaAs/InP Bulk Material

Wide-Band Polarization-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs

Simulation of Polarization-Insensitive Multiple-Quantum-well Superluminescent Diodes

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs

Ultrabroadband and Independent Polarization of Optical Amplification with InGaAs-based Indium-Rich Cluster Quantum-Confined Structure

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic-integrated circuits and components using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Gain-Guiding Anisotropic Polarized Amplified Spontaneous Emissions from C-Plane ZnO/ZnMgO Multiple Quantum Wells

Photonic integrated circuits fabricated using quantum well intermixing

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

Anisotropic optical gains in a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown via pulsed-laser deposition