Polarization Modification In Ingan/Gan Multiple Quantum Wells By Symmetrical Thin Low Temperature-Gan Layers

Yuebin Tao,Zhizhong Chen,Fan Zhang,Chuanyu Jia,Shengli Qi,Tongjun Yu,Xiangning Kang,Zhijian Yang,Liping You,Dapeng Yu,Guoyi Zhang

DOI: https://doi.org/10.1063/1.3374686

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:Light emitting diodes (LEDs) using InGaN/GaN quantum wells (QWs) with thin low temperature GaN (LT-GaN) layers bounding each InGaN layer are grown by metal-organic vapor phase epitaxy. The light output power of such LEDs increases by a factor of 2 at a drive current density of 35 A/cm(2) compared to that from reference LEDs without the LT-GaN. The blueshift in the emission wavelength is 5.2 nm when the current density increases from 3 to 50 A/cm(2), which is much smaller than the shift 8.1 nm from reference LEDs. Moreover, the efficiency droop at high current injection is also reduced by 28%, and current density at which peak efficiency is observed increases from 1 to 2 A/cm(2). High resolution transmission electron microscopy of the QWs bounded with LT-GaN shows higher quality and less strain compared to the reference samples. The better performance of LEDs incorporating the LT-GaN layers is attributed to suppressed polarization from piezoelectric fields. (C) 2010 American Institute of Physics. [doi:10.1063/1.3374686]