Abstract:The performance of AlGaN-based light-emitting diodes (LEDs) emitting at UVAUVC regions can be severely compromised due to the polarization difference (P) between the last quantum barrier (LQB) and the electron blocking layer (EBL). In this work, the different situations of the bandgap difference (Eg) and P of InAlNAlGaN and AlGaNAlGaN heterojunctions fully strained on GaN and AlN substrates are discussed. It shows that the InAlNAlGaN heterojunctions could produce positive or negative sheet charges at the heterointerface under Eg >0, which could not be realized by the conventional AlGaNAlGaN heterojunctions. To demonstrate and utilize the feature, the polarization-modulated InAlN LQBs with 0.140.16 indium compositions of 320 nm UVB LEDs are designed and investigated. It is observed that the InAlN LQBs could replace the conventional AlGaN LQB to improve electron confinement and hole injection by affecting effective barrier heights. By modulating the LQBEBL polarization using InAlN, the proposed UV LED has a 32 enhancement in internal quantum efficiency and lower efficiency droop (from 16.9 to 0.7) compared with the conventional one without modulation. The operation voltage at the same current also significantly decreases. The improvement of optical output power and wall plug efficiency at 60 mA in proposed structures are near 90 and 100, respectively. This study provides a novel and highly effective methodology for development of high efficiency UV LEDs.

Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED

Influence of Polarization Effect on the Luminescence Properties of InGaN-Based LEDs

Theoretical Study of Polarization Effect for AlGaN Ultraviolet LEDs with Different Al Composition

Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Polarization Modification In Ingan/Gan Multiple Quantum Wells By Symmetrical Thin Low Temperature-Gan Layers

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

Effect of Polarization Field on the Photocurrent Characteristics of GaN/AlN Multi-Quantum-Well Avalanche Photodiode

Influence of polarization-induced electric fields on optical properties of intersubband transitions in AlxGa1-xN/GaN double quantum wells

Influence Of Polarization-Induced Electric Field On The Wavelength And The Absorption Coefficient Of The Intersubband Transitions In Alxga1-Xn/Gan Double Quantum Wells

Angular Distribution of Polarized Spontaneous Emissions and Its Effect on Light Extraction Behavior in Ingan-Based Light Emitting Diodes

Depth profiled polarization effects in AlGaN quantum wells probed with interconnected cathodoluminescence spectroscopy and ion sputtering

Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs

Temperature Dependence of Polarized Electroluminescence Side Emission from (0001)-Oriented Blue and Violet InGaN∕GaN Light-Emitting Diodes

Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

Polarization Of Edge Emission From Iii-Nitride Light Emitting Diodes Of Emission Wavelength From 395 To 455 Nm

Effect of Polarization on Intersubband Transition in AlGaN/GaN Multiple Quantum Wells