Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

Li Liu,Qingqing Feng,Yu Zhang,Xiaolu Zhu,Lanli Chen,Zhihua Xiong

DOI: https://doi.org/10.1039/d3cp02934d

IF: 3.3

2023-09-26

Physical Chemistry Chemical Physics

Abstract:Improving the luminescence efficiency of InGaN-based long-wavelength LEDs remains a huge challenge for micro-LED full-color displays. The strain-induced piezoelectric effect is an effective measure to modulate the carrier redistribution at InGaN/GaN heterointerfaces. Our theoretical results reveal that the hole injection is significantly improved by the diminution of the valence band offset (VBO) of InGaN/GaN heterointerfaces along the [0001] direction. Inversely, the VBO increases along the [000-1] direction. The energy band structures showed that the tensile strain of GaN film grown on Si substrate could weaken the internal electric field of the InGaN well layer leading to a flatting of the energy band, which increases the overlap of electron and hole wave functions. Besides, the strain-induced piezoelectric polarization of the InGaN layer on silicon substrate generates opposite sheet-bound charges at the interfaces, which causes a reduction in the depletion region of the InGaN/GaN QWs. The systematic analysis illustrates that the control of the piezoelectric polarization of the InGaN well layer can availably improve the internal quantum efficiency of InGaN-based LEDs.

chemistry, physical,physics, atomic, molecular & chemical